| PART |
Description |
Maker |
| EM4169B6WW11 EM4169B6WW7E EMMICROELECTRONIC-EM4169 |
128 bit Read/Write Contactless Identification Device with OTP function 128位读/写非接触识别装置的OTP功能
|
EM Microelectronic
|
| SRI51211 SRI512 SRI512-SBN18/1GE |
512-bit ISO14443-B contactless memory with 2 binary counters, 5 OTP blocks and anti-collision
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
|
ST Microelectronics
STMicroelectronics
|
| AM29BDD160GB54DKF AM29BDD160GB54DKK AM29BDD160GB54 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
AMD[Advanced Micro Devices]
|
| EM4450A5WS7 EM4450A5WW6E EM4450A5WS7E EM4550A5WS11 |
1 KBit Read/Write Contactless Identification Device 1千位写非接触式识别装
|
EM Microelectronic
|
| CY14B512Q2A-SXIT CY14E512Q CY14C512Q |
512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
| CY14B512J2-SXI CY14B512J2-SXIT CY14E512J CY14C512J |
512-Kbit (64 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
| S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品（MCP）的512兆位2兆16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
|
| SSI32R2020R-4CL SSI32R2020R-4CV SSI32R2020R-6CV SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
10-Channel Disk Read/Write Circuit 10通道磁盘写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
DB Lectro, Inc.
Lattice Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| EM4006F9WT7E EM4006F9WS21E EM4006F9WS7E EM4006F9WP |
13.56 MHz 64 Data bit Read Only Contactless Identification Device
|
EM Microelectronic - MARIN SA
|
| H4006501IC H4006 H4006501CID H4006501COB |
13.56MHz 64 Data bit Read Only Contactless Identification Device
|
EMMICRO[EM Microelectronic - MARIN SA]
|
| AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
