| PART |
Description |
Maker |
| MX29F100TTC-12 MX29F100TTA-12 |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| TC58FVT800F-85 TC58FVT800-10 TC58FVT800-85 TC58FVT |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
50 AMP LATCHING POWER RELAY
|
Toshiba Corporation
|
| TC58FVM5B3AXB65 TC58FVM5B3AFT65 TC58FVM5T3AXB65 TC |
东芝马鞍山数字集成电路硅栅CMOS
32MBIT (4M 8 BITS/2M 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| K9F4G08U0M K9K8G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| W29EE011Q-90 W29EE011-15B W29EE011Q-15 W29EE011P90 |
EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC
EEPROM|FLASH|128KX8|CMOS|LDCC|32PIN|PLASTIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LDCC | 32脚|塑料
EEPROM|FLASH|128KX8|CMOS|TSSOP|32PIN|PLASTIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | TSSOP封装| 32脚|塑料
|
Winbond Electronics, Corp.
TE Connectivity, Ltd.
|
| K9F1208B0C K9F1208X0C K9F1208R0CJIB00 |
64M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| K9E2G08U0M-Y K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M- |
256M x 8 Bits NAND Flash Memory
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F1208R0C |
64M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| UPD29F032202AL-X |
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES
|
NEC
|
| M5M29F25611VP |
MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
MORE THAN 16 /057 SECTORS (271 /299 /072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
