PART |
Description |
Maker |
FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V PNP Low Sat Transistor TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
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Zetex Semiconductors Diodes Incorporated Zetex Semiconductor PLC
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IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor
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Infineon Technologies AG
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB 7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB 2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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Motorola Mobility Holdings, Inc. MOTOROLA INC
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BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986 15 A, 140 V, NPN, Si, POWER TRANSISTOR 16 A, 80 V, PNP, Si, POWER TRANSISTOR 16 A, 250 V, PNP, Si, POWER TRANSISTOR
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Motorola AMERICAN MICROSEMICONDUCTOR INC
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2SB1370 2SB1565 2SB1565F 2SB1655 |
Power Transistor (-60V/ -3A) Power Transistor (-60V, -3A) Power Transistor (-60V -3A) Power Transistor(-60V, -3A) 3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
|
ROHM[Rohm]
|
SPW20N60CFD |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 Cool MOS?/a> Power Transistor Cool MOS Power Transistor Cool MOS⑩ Power Transistor for lowest Conduction Losses & fastest Switching
|
INFINEON[Infineon Technologies AG]
|
CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202 Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
|
C67078-A1309-A3 BUZ80A BUZ80AC67078-S1309-A3 |
From old datasheet system SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode) TRANSISTOR TO 220 MOSFET N KANAL
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http:// SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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IPB100N04S2L-03 IPP100N04S2L-03 SP0002-19062 SP000 |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
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Infineon Technologies AG
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