PART |
Description |
Maker |
DTB713ZE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTD743EE09 |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTD713ZM DTD713ZE |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTD723YE09 DTD723YM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTB743XM DTB743XE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
NSS30070MR6T1G |
30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
2SB118410 2SB1184TLR 2SB1243TV2Q |
Power Transistor (-60V, -3A) Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
|
Rohm
|
2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
30C02MH-TL-E |
Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single MCPH3
|
ON Semiconductor
|
CMLT591E |
SMD Small Signal Transistor PNP Low VCE(SAT) PNP Low VCE(Sat) 1.0 Amp transistor
|
CENTRAL[Central Semiconductor Corp]
|
IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types HiPerFAST IGBT(VCES00V,VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管) HiPerFAST IGBT(VCES00V,VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation] IXYS, Corp.
|