| PART |
Description |
Maker |
| DTB523YE DTB523YE10 DTB523YM |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| 2SA1900 |
Low saturation voltage, typically VCE(sat) = 0.15V at IC /IB = 500mA / 50mA
|
TY Semiconductor Co., Ltd
|
| 2DA2018 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
|
Diodes
|
| NSS12600CF8 |
12V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
|
ON Semiconductor
|
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| 2SB1115A |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| TSB1184ACPS TSB1184A TSB1184ACP TSB1184ACPQ TSB118 |
Low Vce(sat) PNP Transistor 低Vce（sat）PNP晶体
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| HSD2118J |
LOW VCE(sat) TRANSISTOR (20V, 5A) 低Vce（sat）晶体管0V的，5A）条
|
HI-SINCERITY MICROELECTRONICS, CORP.
HSMC
Hi-Sincerity Mocroelectronics
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V，VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V，VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
