PART |
Description |
Maker |
CY62127BV CY62127BVLL-55BAI CY62127BVLL-55ZI CY621 |
64K x 16 Static RAM Memory : MicroPower SRAMs
|
Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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CY62126BV CY62126BVLL-55BAI CY62126BVLL-55ZI CY621 |
64K x 16 Static RAM Memory : MicroPower SRAMs
|
Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
CY62126DV30L CY62126DV30L-55ZSI CY62126DV30L-70BVI |
1-Mbit (64K x 16) Static RAM 1兆位4K的16)静态RAM Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:18-32 Memory : MicroPower SRAMs
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Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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CY7C188-25VC CY7C188-15VC CY7C188-35VC CY7C188 CY7 |
Memory : Async SRAMs 32K x 9 Static RAM
|
CYPRESS[Cypress Semiconductor]
|
CY7C1316AV18 CY7C1318AV18-167BZC CY7C1318AV18 CY7C |
Memory : Sync SRAMs 18-Mbit DDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
CXK77Q36162GB |
MEMORY-UHS Synch SRAMs 16Meg Ultra-High-Speed Synchronous SRAM (512K x 36) (24 pages 311K Rev. 7/3/02) 内存超高强同步SRAM6Meg超高速同步SRAM(为512k × 36)(2431.1牧师7/3/02
|
Sharp, Corp.
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GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology] http://
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IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100 256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
GS816018CT-250I GS816018CGT-250I GS816018CT-333 GS |
18Mb Burst SRAMs 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
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IDT Integrated Device Technology, Inc.
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