| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| MTM2N50 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
|
| UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| MRF1511T1 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司
|
| MRF1518T1 |
RF Power Field Effect Transistor
|
Motorola, Inc.
|
| CMT10N10N220 CMT10N10 |
POWER FIELD EFFECT TRANSISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MTM12P05 MTM12P06 MTM12P08 MTM12P10 MTP12P05 MTP12 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MRF6V2010N |
RF Power Field Effect Transistor
|
Motorola Semiconductor
|
| MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MRF255PHT |
RF Power Field-Effect Transistor
|
Motorola, Inc
|
