| PART |
Description |
Maker |
| PLCDA03C-6 PLCDA05C-6 PLCDA15C-6 |
Direct ProTek Replacement:PLCDA05C-6
Direct ProTek Replacement:PLCDA15C-6
Direct ProTek Replacement:PLCDA03C-6 直接太克替代：PLCDA03C - 6
|
Sumida, Corp.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| HYR1612820 HYR183220G-840 HYR1612820G-653 HYR18642 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) 直接的RDRAM RIMM的模块（44兆RDRAMs
CONN HEADER .100 DUAL STR 72POS
CONN HEADER .100 DUAL R/A 72POS
128M X 16 DIRECT RAMBUS DRAM MODULE, 2.06 ns, DMA184
|
INFINEON[Infineon Technologies AG]
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC-4R128FKK6K-840 MC-4R128FKK6K |
128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA232
128MB 32-bit Direct Rambus DRAM RIMM Module
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| SL6679TP1N SL6679KG MITELNETWORKSCORPORATION-SL667 |
Direct Conversion FSK Data Receiver
2-7V; direct conversion FSK data receiver. For pagers, including credit card, PCMCIA and watch pagers, low data rate receivers
|
Mitel Semiconductor
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MAX2700 MAX2700ECM MAX2701 MAX2700-MAX2701 MAX2701 |
1.8GHz to 2.5GHz.Direct-Downconversion Receivers
1.8GHz.5GHz的直接变频接收器
1.8GHz to 2.5GHz Direct Downconversion Receivers RF/MICROWAVE DOWN CONVERTER
|
Maxim Integrated Products, Inc.
|
| MB54608B MB54608L MB54608LPFV MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 800 MHz - 1000 MHz RF/MICROWAVE I/Q MODULATOR
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 1.0 GHz频段的低功率的I / Q调制器的直接转换
|
Fujitsu Microelectronics
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu, Ltd.
|
| EBR25UC8ABKD-8C EBR25UC8ABKD-AD EBR25UC8ABKD-AE EB |
256MB 32-bit Direct Rambus DRAM RIMM?/a> Module
256MB 32-bit Direct Rambus DRAM RIMM Module
256MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
|
Elpida Memory
|
