| PART |
Description |
Maker |
| Q68000-A8884 CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| 2SC3665 E000871 |
NPN EPITAXIAL TYPE (AUDIO POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| RF2173PCBA-41X RF21731 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS[ANADIGICS, Inc]
|
| MRFIC0970 |
3.2V GSM GaAs Intergrated Power Amplifier 3.2V的集成的GSM砷化镓功率放大器
|
飞思卡尔半导体(中国)有限公司
Freescale Semiconductor, Inc
|
| 2SA1588 E000541 |
TRANSISTOR (AUDIO FREQUENCY LOW POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER/ SWITCHING APPLICATIONS
TRANSISTOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS
AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
