PART |
Description |
Maker |
CG6257AM |
4Mb (256K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
CYK256K16SCCBU-60BVI CYK256K16SCCBU-55BVI CYK256K1 |
4-Mbit (256K x 16) Pseudo Static RAM
|
http:// Cypress Semiconductor
|
LH5PV16256 |
CMOS 4M (256K x 16) Pseudo-Static RAM
|
Sharp Electrionic Compo...
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
CYU01M16ZFCU-70BVXI CYU01M16ZFC |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, FBGA-48 16-Mbit (1M x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
CYU01M16SCEU-70BVXI CYU01M16SCE CYU01M16SCEU-70BVX |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48 16-Mbit (1M x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
MSM548128BL MSM548128BL-70GS-K MSM548128BL-80GS-K |
128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32 128K X 8 PSEUDO STATIC RAM, 70 ns, PDSO32 From old datasheet system 131,072-Word x 8-Bit High-Speed PSRAM
|
OKI ELECTRIC INDUSTRY CO LTD
|
GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM 180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
CY7C197BN-25PC CY7C197BN-15VC |
256-Kb (256 K x 1) Static RAM Fast access time: 15 ns 256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24 256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 25 ns, PDIP24
|
Cypress Semiconductor, Corp.
|
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位)分位,写延迟LVTTL高速同步静态随机存储器56 × 18位)
|
Sony, Corp.
|
CY14B104M-ZSP25XI |
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54
|
Cypress Semiconductor, Corp.
|
GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器 256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC Electronic Theatre Controls, Inc.
|