PART |
Description |
Maker |
BS223 |
DMOS Transistors (P-Channel) DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE[General Semiconductor] GE Security, Inc.
|
BS870 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
BS828 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
BS109 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管(N沟道)(不适用通道的DMOS晶体管)
|
GE Security, Inc. GE[General Semiconductor]
|
ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS MOS Field Effect Transistors SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
TB6200X TB62009P TB62003 TB62003F TB62003FW TB6200 |
8 CH DMOS TRANSISTOR ARRAY WITH GATE 8路DMOS晶体管阵列门 8CH DMOS TRANSISTOR APPAY WITH GATE From old datasheet system
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
ZVP3310A ZVP3310 |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 140 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Zetex Semiconductors Zetex Semiconductor PLC
|
EMF9 |
Transistors > Complex Bipolar Transistors From old datasheet system Power management (dual transistors)
|
Rohm CO.,LTD.
|