| PART |
Description |
Maker |
| MA2HD07 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| MA3S795E MA3S795D MA795WK MA795WA |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| MA784 MA2Z784 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| MA3X789 MA789 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| MA3J745E MA3J745D MA745WA MA745WK |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| CDBURT0230L-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAS40-04 BAS40-04LT1G BAS40-04LT1 BAS40-04L |
Dual Series Schottky Barrier Diode
SCHOTTKY BARRIER DIODES
|
ONSEMI[ON Semiconductor]
|
| BAS40-04W BAS40-05W BAS40-06W BAS40W BAS40W_3 |
Schottky barrier double diodes
From old datasheet system
Schottky barrier (double) diodes
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
