| PART |
Description |
Maker |
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| UPC2709T-E3 UPC2712T-E3 UPC2709T UPC2712T |
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER 2.5千兆赫硅单片宽带放大
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| SA5205AD SA5205AN NE5205AD NE5205AN NE5205A SA5205 |
Wide-band high-frequency amplifier 0 MHz - 600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SC5554 |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| 2SC5812WG-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| 2SC5758 |
Silicon NPN Epitaxial VHF / UHF Wide band amplifier
|
HITACHI[Hitachi Semiconductor]
|
| 2SC5631 |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
|
Renesas Electronics Corporation
|
| 2SC5758 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor
|
| 2SC5757 2SC5757WE-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| 2SC5555 2SC5555ZD-TR-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| 2SC5827 |
Silicon NPN Transistor
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor
|
