| PART |
Description |
Maker |
| 3SK309 |
Silicon N Channel MOS FET GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| BF909WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
| 3SK194 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| BF908WR BF908WR_1 |
N-channel dual-gate MOS-FET From old datasheet system
|
Philips
|
| BF1203 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF992 BF992_3 |
Silicon N-channel dual gate MOS-FET From old datasheet system
|
PHILIPS[Philips Semiconductors]
|
| 3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation] SONY [Sony Corporation]
|