PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
BF966 |
N-Channel Dual Gate MOS Fieldeffect Tetrod
|
Telefunken
|
BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
|
Vishay
|
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC] NEC Corp.
|
UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N Channel enhancement MOS FET
|
NEC Corp. NEC[NEC]
|
2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B |
N-channel MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING From old datasheet system
|
NEC[NEC]
|
UPA652TT UPA652TT-E1 UPA652TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|