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BDY25 - 8/20us Max :65V; Peak Energy (10/1000uS):1.2J; Capacitance, Cd:1100pF NPN SILICON TRANSISTORS/ DIFFUSED MESA 8/20us Max :65V; Peak Energy (10/1000uS):3J; Capacitance, Cd:2700pF NPN SILICON TRANSISTORS, DIFFUSED MESA

BDY25_1218963.PDF Datasheet

 
Part No. BDY25 180T2 181T2 182T2 BDY23 BDY24 BDY182 BDY181
Description 8/20us Max :65V; Peak Energy (10/1000uS):1.2J; Capacitance, Cd:1100pF
NPN SILICON TRANSISTORS/ DIFFUSED MESA
8/20us Max :65V; Peak Energy (10/1000uS):3J; Capacitance, Cd:2700pF
NPN SILICON TRANSISTORS, DIFFUSED MESA

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Comset Semiconductors
Electronic Theatre Controls, Inc.
ETC[ETC]
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 Full text search : 8/20us Max :65V; Peak Energy (10/1000uS):1.2J; Capacitance, Cd:1100pF NPN SILICON TRANSISTORS/ DIFFUSED MESA 8/20us Max :65V; Peak Energy (10/1000uS):3J; Capacitance, Cd:2700pF NPN SILICON TRANSISTORS, DIFFUSED MESA
 Product Description search : 8/20us Max :65V; Peak Energy (10/1000uS):1.2J; Capacitance, Cd:1100pF NPN SILICON TRANSISTORS/ DIFFUSED MESA 8/20us Max :65V; Peak Energy (10/1000uS):3J; Capacitance, Cd:2700pF NPN SILICON TRANSISTORS, DIFFUSED MESA


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