| PART |
Description |
Maker |
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| ADP150 ADF4350 |
Broadband Low Error Vector Magnitude Direct Conversion Transmitter Using LO Divide-by-2 Modulator
Powering a Fractional-N Voltage Controlled Oscillator with Low Noise LDO Regulators for Reduced Phase Noise
Broadband Low Error Vector Magnitude Direct Conversion Transmitter Using LO Divide-by-2 Modulator
|
Analog Devices
|
| MB54608B MB54608L MB54608LPFV MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 800 MHz - 1000 MHz RF/MICROWAVE I/Q MODULATOR
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 1.0 GHz频段的低功率的I / Q调制器的直接转换
|
Fujitsu Microelectronics
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu, Ltd.
|
| PS2500AIT PS2500AIT-ES2_2 PS2500 |
Low-Power Direct Digital Modulation Frequency Synthesizer
|
ETC[ETC]
|
| LTC5599 |
30MHz to 1300MHz Low Power Direct Quadrature Modulator
|
Linear Technology, Corp.
|
| PS2500AIT-ES2/2 |
Low-Power Direct Digital Modulation Frequency Synthesizer 低功耗直接数字调制频率合成器
|
Electronic Theatre Controls, Inc.
|
| FDG6303N |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
|
TY Semiconductor Co., L...
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AD9913/PCBZ1 AD9913BCPZ-REEL71 AD9913BCPZ1 |
Low Power 250 MSPS 10-Bit DAC 1.8 V CMOS Direct Digital Synthesizer 低功50 MSPS10位DAC 1.8伏CMOS直接数字频率合成
|
Analog Devices, Inc.
|
| AUIRFZ24NL AUIRFZ24NS AUIRFZ24NSTRR AUIRFZ24NSTRL |
Advanced Planar Technology Low On-Resistance
|
International Rectifier
|
| STI7105 STI7105ZUB |
Low cost advanced HD decoding IC for STB
|
STMicroelectronics
|
| AUIRF7342Q AUIRF7342QTR |
Advanced Planar Technology Low On-Resistance
|
International Rectifier
|
