| PART |
Description |
Maker |
| BBY59-02V BBY59 |
Latest Silicon Discretes - Hyperabrupt Varactordiode for VCO applications
Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| TN22 TN22-1200 TN22-1500 TN22-1500B TN22-1500B-TR |
STARTLIGHT(Application Specific Discretes A.S.D.?
STARTLIGHT(Application Specific Discretes A.S.D.)
STARTLIGHT(Application Specific Discretes A.S.D.⑩)
STARTLIGHT(Application Specific Discretes A.S.D. STARTLIGHT（专用分立建筑⑩
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| FII40-06D |
IGBT Discretes
|
IXYS
|
| FID36-06D |
IGBT Discretes
IGBT Chopper in ISOPLUS i4-PACTM
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXGH20N120 IXGT20N120 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS Corporation
|
| IXGR60N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS
|
| 6-1803017-0 |
SHOULD BE CONTACTED FOR THE LATEST REVISION.
|
TE Connectivity Ltd
|
| SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
