PART |
Description |
Maker |
MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a> SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SOT23 SILICON HIGH CURRENT 0.5 A, SILICON, SIGNAL DIODE High Current Schottky Diode
|
ZETEX[Zetex Semiconductors] Diodes Incorporated
|
HSB88WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
RB521ZS-301 |
Schottky Barrier Diode 0.1 A, 30 V, SILICON, SIGNAL DIODE ULTRA SMALL, GMD2, 2 PIN Schottky Barrier Diode
|
Rohm Incon, Inc.
|
MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
Q62702-A1017 BAT11099 BAT114-099 |
From old datasheet system Silicon Dual Schottky Diode (High barrier diode for balanced mixers phase detectors and modulators) Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) SILICON, HIGH BARRIER SCHOTTKY, MIXER DIODE
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HSB226WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
CD214A-B130L CD214A-B140L |
Schottky Barrier Rectifier Chip Diode 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AC Schottky Barrier Rectifier Chip Diode 肖特基整流二极管芯片
|
Bourns, Inc.
|
MADS-001339-1279OT MA4E1339 MA4E1339A1-1141TSOT-23 |
SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE Silicon Medium Barrier Schottky Diodes`
|
MACOM[Tyco Electronics]
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG Diodes Incorporated
|