| PART |
Description |
Maker |
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| APTGF90DA60D1 |
130 A, 600 V, N-CHANNEL IGBT
Boost Chopper - IGBT
Boost Chopper NPT IGBT Power Module
|
Advanced Power Technology
|
| IXDP20N60BD1 IXDP20N60B |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| APT30GP60LDLG APT30GP60B2DLG |
IGBT w/ anti-parallel diode
NPT IGBT & Trench IGBT
|
Microsemi
|
| APTGF400U120D4G |
Single switch NPT IGBT Power Module
|
Microsemi Corporation
|
| APTGF150H120G |
Full - Bridge NPT IGBT Power Module
|
MICROSEMI[Microsemi Corporation]
|
| APTGF30H60T3G |
Full - Bridge NPT IGBT Power Module
|
MICROSEMI[Microsemi Corporation]
|
| APTGF300DA120G |
Boost chopper NPT IGBT Power Module
|
MICROSEMI[Microsemi Corporation]
|
| APTGF50H60T3G |
Full - Bridge NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
