| PART |
Description |
Maker |
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT5028SVR |
POWER MOS V 500V 20A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| AOW20S60 AOWF20S60 |
600V 20A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
| AOB20S60 AOT20S60 AOTF20S60 AOB20S60L |
600V 20A a MOS TM Power Transistor
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| APT12057JLL |
POWER MOS 7 1200V 19A 0.570 Ohm
|
Advanced Power Technology
|
| RJH1CD5DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| NCE20G120T |
1200V, 20A, Trench NPT IGBT
|
Wuxi NCE Power Semiconductor Co., Ltd
|
| FGA20S120M |
1200V, 20A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| NGTB20N120L |
IGBT 1200V 20A FS1 Gen Mkt
|
ON Semiconductor
|
| RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package
|
International Rectifier
|
