PART |
Description |
Maker |
AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET 20V P-Channel Enhancement Mode MOSFET Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No MS27467T21B41S
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Anachip Corp ETC
|
ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
IRF7204 IRF7204TR |
TRI N PLUG M 0-48 NO SEAL Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A) -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRLR3715 IRLU3715 IRLR3715TRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 54A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 54A条(丁)|52AA SMPS MOSFET 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
SI2300 |
VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m
|
TY Semiconductor Co., Ltd
|
FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET 20V N & P-Channel PowerTrench MOSFETs 20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FDMA520PZ FDMA520PZ08 |
Single P-Channel PowerTrench? MOSFET -20V, -7.3A, 30mΩ Single P-Channel PowerTrench㈢ MOSFET -20V, -7.3A, 30mヘ
|
Fairchild Semiconductor
|
HS-22620RH HS-2620RH HS-2622RH |
Op Amp, Dual, Wideband, High Input Impedance Uncompensated, 100MHz, 20V/s, Rad-Hard Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 500MΩ Input Impedance Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 65MΩ Input Impedance
|
Intersil
|
KDC6020C |
N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m
|
TY Semiconductor Co., Ltd
|
IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管) N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|