PART |
Description |
Maker |
A43L8316AV-7 A43L8316A A43L8316AV A43L8316AV-5 A43 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
A43L8316AV-5.5 AMICTECHNOLOGYCORPORATION-A43L8316A |
128K X 16 Bit X 2 Banks Synchronous DRAM 128K的16位2银行同步DRAM
|
AMIC Technology Corporation AMIC Technology, Corp.
|
IS42S16128 |
128K words x 16 Bits x 2 Banks SDRAM
|
Integrated Silicon Solution Inc
|
KM4132G271AQ-10 KM4132G271A KM4132G271A-8 KM4132G2 |
128K x 32Bit x 2 Banks Synchronous Graphic RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HT23C010 23C010 |
From old datasheet system CMOS 128K x 8-Bit Mask ROM(CMOS 128K x 8位掩模式ROM) 的CMOS 128K的8位掩模ROM28K的的CMOS × 8位掩模式光盘 CMOS 128K 8-Bit Mask ROM CMOS 128K? 8-Bit Mask ROM CMOS 128K′ 8-Bit Mask ROM
|
Holtek Semiconductor, Inc. HOLTEK[Holtek Semiconductor Inc]
|
KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-10 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
|
Samsung semiconductor
|
UPD431000A-XXX UPD431000AGZ-85L-KJH UPD431000ACZ-X |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT 128K X 8 STANDARD SRAM, 85 ns, PDSO32
|
NEC
|
MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 x8 Flash EEPROM x8闪存EEPROM
|
Macronix International Co., Ltd.
|
CAT25C128XA-1.8-GT3 CAT25C128XA-GT3 CAT25C128XA-1. |
128K/256K-Bit SPI Serial CMOS EEPROM 128K/256K-Bit SPI串行EEPROM中的CMOS
|
ON Semiconductor Unisonic Technologies Co., Ltd. TDK, Corp. Atmel, Corp. Advanced Analog Technology, Inc. Silicon Storage Technology, Inc. Air Cost Control
|
IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|