| PART |
Description |
Maker |
| 3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Intersil
|
| 3N204 3N205 |
(3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors
|
GE Solid State
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| GT10J321 GT10.321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT80J101B |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
