| PART |
Description |
Maker |
| 2SK3101 2SK3101LS |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3707 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH3322 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3829 |
High Output MOSFETs
|
SANYO
|
| 2SK3816 |
High Output MOSFETs
|
SANYO
|
| 2SK3832 |
High Output MOSFETs
|
SANYO
|
| 2SK3704 |
High Output MOSFETs
|
SANYO
|
| CPH6318 |
Medium Output MOSFETs
High-Speed Switching Applications
|
Sanyo Semicon Device
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
| OA100FL16 OA100FL18 OA100NL15 OA100NL19 CA25FL20 C |
1 ELEMENT, 18000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 46000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 16000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 130000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7400000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 180000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 280000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 31000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 260000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3200000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 35000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7700 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2600000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4200000 uH, GENERAL PURPOSE INDUCTOR
|
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
|
