| PART |
Description |
Maker |
| 40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
| NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
| MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors
|
ON Semiconductor
http://
|
| BD678G |
Plastic Medium−Power Silicon PNP Darlingtons 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA
|
ON Semiconductor
|
| 2SA1009 2SA1009A 2SA1009AH 2SA1009AM 2SA1009J 2SA1 |
PNP SILICON POWER TRANSISTORS 进步党硅功率晶体
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-220AB
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SB1631 |
Silicon PNP epitaxial planar type(For power amplification) 3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2N4399 |
PNP Silicon High-Power Transistor(60V（集电极-发射极）硅PNP大功率晶体管) 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| BD544 BD544C BD544A BD544B |
PNP SILICON POWER TRANSISTORS
ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
8 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220
|
http://
POINN[Power Innovations Ltd]
Power Innovations Limited
Power Innovations International, Inc.
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
