| PART |
Description |
Maker |
| CM10AD00-12H |
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM50MD1-12H |
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE/ INSULATED TYPE
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM20MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CM15MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| 11A19/27 |
11 watt; A19 Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts
|
Satco Products, Inc.
|
| 7A19/27 |
7 watt; A19 Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts
|
Satco Products, Inc.
|
| INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器)
3V Fixed Gain. Medium Power Amplifier
3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器）
|
Agilent(Hewlett-Packard)
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
|
TOSHIBA[Toshiba Semiconductor]
|
