| PART |
Description |
Maker |
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| RKV5000DKK |
Diodes>Variable Capacitance
Variable Capacitance Diode for UHF/VHF tuner
Vari-Cap Diodes for Electric Tuning
|
RENESAS[Renesas Electronics Corporation]
http://
|
| HVU355B |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC383B |
20 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
High Q Hyperabrupt Tuning Varactors
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
| GC3202-00 GC3205-50 |
UHF BAND, 21.5 pF, 180 V, SILICON, VARIABLE CAPACITANCE DIODE
C BAND, 2.25 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
|
