PART |
Description |
Maker |
MS2200 |
Bipolar/LDMOS Transistor RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
|
Microsemi Corporation Advanced Power Technology
|
BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BSS73CSM BSS73CSM-QR-B |
Bipolar NPN Device in a Hermetically sealed LCC1 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Seme LAB SEMELAB LTD
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
PTFA043002E |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 鈥?860 MHz
|
Infineon Technologies AG
|
BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor L-band radar LDMOS driver transistor From old datasheet system
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,; SiGe:C Low Noise High Linearity Amplifier
|
NXP Semiconductors N.V.
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BLF6G10LS-200R |
Power LDMOS transistor
|
NXP Semiconductors
|