| PART |
Description |
Maker |
| MMBF2202PT1G MMBF2202PT106 MMBF2202PT1 |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| MGSF1P02EL |
Power MOSFET 750 mAmps, 20 Volts
|
ON Semiconductor
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| MGSF1N03LT1 MGSF1N03LT3 MGSF1N03LT3G MGSF1N03L MGS |
Power MOSFET 750 mAmps, 30 Volts
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
From old datasheet system
|
ON Semiconductor
|
| BVSS123LT1G |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G |
Power MOSFET 500 mAmps, 60 Volts
Power MOSFET 500 mA, 60 V
|
ONSEMI[ON Semiconductor]
|
| RFP8P06LE RFD8P06LESM RFD8P06LE FN4273 |
8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET
From old datasheet system
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，额定静电释放P沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts
|
Leshan Radio Company
|
