| PART |
Description |
Maker |
| IRFIBC40GLC IRFIBC40GLCPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
|
IRF[International Rectifier]
|
| IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STSJ2NM60 |
N-CHANNEL 600V - 2.8 OHM - 2A POWER SO-8 ZENER-PROTECTED MDMESH POWER MOSFET
N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh⑩ POWER MOSFET
N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FQI5N60C FQB5N60C FQB5N60CTM |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
600V N-Channel Advance QFET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
http://
STMicroelectronics
|
| EVK75-050 2DI75S050A |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五（巴西）总裁| 75
|
Analog Devices, Inc.
|
| APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
LINEAR MOSFET 600V 43A 0.125?/a>
LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp.
Advanced Power Technology
|
| RHRP640CC FN4464 RHRP660CC RHRP650CC |
6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩??????)
6A/ 400V - 600V Hyperfast Dual Diodes
6A, 600V Ultrafast Dual Diodes(6A, 600V 超快双二极管)
6A, 400V - 600V Hyperfast Dual Diodes
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND ST |
N-channel 600V - 0.37ヘ - 10A - FDmesh⑩ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37Ω - 10A - FDmesh?/a> II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37Ω - 10A - FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37楼? - 10A - FDmesh垄芒 II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
|
STMicroelectronics
|
