| PART |
Description |
Maker |
| 400U80D |
Diode Switching 800V 400A 2-Pin DO-9
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Vishay Semiconductors
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| SPD02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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Infineon
|
| SB002-15CP |
150V/ 20mA Rectifier
150V, 20mA Rectifier
Small signal(single type)
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| 2SC3992 |
NPN Triple Diffused Planar Silicon Transistor 800V/12A Switching Regulator Applications
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SANYO
|
| 2SC4428 0485 |
NPN Triple Diffused Planar Silicon Transistor 800V/6A Switching Regulator Applications
From old datasheet system
|
Sanyo
|
| 2SC3183 0304 |
NPN Triple Diffused Planar Silicon Transistor 800V/0.2A Switching Regulator Applications
From old datasheet system
|
Sanyo
|
| 2SC3459 0330 |
NPN Triple Diffused Planar Silicon Transistor 800V/4.5A Switching Regulator Applications
From old datasheet system
|
Sanyo
|
| LT1361 LT1361CN8 LT1361CS8 LT1362 LT1362CN LT1362C |
Dual and Quad 50MHz/ 800V/us Op Amps
OCTAL BUFFERS AND LINE DRIVERS 20-SO 0 to 70
Dual and Quad 50MHz, 800V/us Op Amps
From old datasheet system
Dual and Quad 50MHz, 800V/s Op Amps
Dual and Quad 50MHz, 800V/µs Op Amps
|
Linear Technology Corporation
LINER[Linear Technology]
|
| STK11C68-W30 STK11C68-W45 STK11C68-W45I STK11C68-C |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:8A; Holding Current:50mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Current, It av:15A; Holding Current:70mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Package/Case:TO-3; Current, It av:25A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
|
Electronic Theatre Controls, Inc.
|
| FQA8N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB4NB80 STB4NB80FP 5976 |
N - CHANNEL 800V - 3 Ohm - 4A - PowerMESH MOSFET
From old datasheet system
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道800V3Ω- 4A条，TO-220/TO-220FP PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
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