| PART |
Description |
Maker |
| GB01SHT12-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package
600V Silicon Carbide Ultrafast Schottky Diode
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SHD617052BN SHD617052AN SHD617052AP SHD617052BP SH |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| UPSC203 UPSC403 UPSC603 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
Microsemi Corporation
|
| STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| SIDC24D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| SDT12S60 Q67040-S4470 |
High Speed CMOS Logic Hex Inverting Buffers 16-SOIC -55 to 125
Silicon Carbide Schottky Diodes - 12A diode in TO220-2 package
|
Infineon Technologies A...
Infineon Technologies AG
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NXPSC08650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| SHD676112 SHD676112B |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
