| PART |
Description |
Maker |
| TC1268 TC1268-2.5VOA TC1268-2.5VOATR |
The TC1268 is a fixed output, fast turn-on, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically ...
500mA Fixed Output / Fast Response CMOS LDO with Shutdown
500mA Fixed Output, Fast Response CMOS LDO with Shutdown
|
Microchip Technology Inc.
|
| MB814100D-60 MB814100D-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
CMOS 4 M ?1 BIT Fast Page Mode DRAM(CMOS 4 M ?1浣??椤甸?瀛??妯″??ㄦ?RAM)
|
Fujitsu Limited
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| IDT54FCT22 IDT54FCT2245AT IDT54FCT2245ATD IDT54FCT |
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FCT SERIES, 8-BIT TRANSCEIVER, INVERTED OUTPUT, PDSO20
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FCT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CDFP20
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS 快速CMOS八路双向收发
CAP 0.47UF 16V 80-20% Y5V SMD-0805 TR-7-PL SN-NIBAR 快速CMOS八路双向收发
CAP 0.22UF 50V 80-20% Z5U SMD-1210 TR-7-PL SN-NIBAR 快CMOS八路双向收发
Multilayer Ceramic Chip Capacitor; 1.0uF, 25V, Y5V, SMD-1206 ; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CAP 1.5UF 25V 10% X7R SMD-1210 TR-7-PL SN-NIBAR
CAP 0.15UF 50V 5% X7R SMD-1210 TR-7-PL SN-NIBAR
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
Integrated Device Techn...
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| IDT54FCT2374ATQ IDT54FCT2374ATQB IDT74FCT2374ATQ I |
Fast CMOS octal D register (3-state)
CAP 0.039UF 100V 10% X7R SMD-1206 TR-7-PL SN-NIBAR 快速CMOS八路D寄存器（3态）
FAST CMOS OCTAL D REGISTERS (3-STATE) 快速CMOS八路D寄存器（3态）
CAP 1UF 16V 5% Y5V SMD-0805 TR-7-PL SN-NIBAR FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDSO20
CAP 0.47UF 200V 20% X7R SMD-2225 TR-7-PL SN-NIBAR
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AS4LC4M4F1-60TI AS4LC4M4F1 AS4LC4M4F1-50JC AS4LC4M |
4M×4 CMOS DRAM (Fast Page) 3.3V Family
4M】4 CMOS DRAM (Fast Page) 3.3V Family
4M CMOS DRAM (Fast Page) 3.3V Family 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4M CMOS DRAM (Fast Page) 3.3V Family 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| SAB80C166-3S SAB80C166-S Q67120-C493 |
HIGH-PERFORMANCE 16-BIT CMOS SINGLE-CHIP MICROCONTROLLERS FOR EMBEDDED CONTROL APPLICATIONS
High Speed CMOS Logic 4-Bit Binary Full Adder with Fast Carry 16-SOIC -55 to 125
|
Siemens Semiconductor Group
SIEMENS AG
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
