PART |
Description |
Maker |
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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Mitsubishi Electric Semiconductor
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
FD3000AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率,高频率新闻袋
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
33981 PC33981PNA/R2 MC33981 |
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 m?up to 60 kHz) High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 mз up to 60 kHz) 高频率,大电流,自我保护的高边开关(4.0mз0千赫 High-Frequency/ High-Current/ Self-Protected High-Side Switch (4.0 m up to 60 kHz)
|
Motorola, Inc. Motorola Mobility Holdings, Inc. Motorola Inc
|
15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
FP1007R6-R33-R FP1007R6-R39-R FP1007R6-R27-R FP100 |
High Current, High Frequency, Power Inductors
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List of Unclassifed Manufacturers
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MC12CD060D-F MC12CF080D-F MC12FD560J-F MC12EF120J- |
High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electr...
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
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KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor Audio Frequency Amplifier & High Frequency OSC. Audio Frequency Amplifier & High Frequency OSC.
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
FD2000DU-120 |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
POWEREX[Powerex Power Semiconductors]
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