| PART |
Description |
Maker |
| SPP77N06S2-12 SPB77N06S2-12 |
OptiMOS Power-Transistor
Low Voltage MOSFETs - TO220/263; 77 A; 55V; NL; 12 mOhm
|
Infineon Technologies A...
Infineon Technologies AG
|
| SPB100N08S2L-07 SPP100N08S2L-07 |
Low Voltage MOSFETs - TO220/263; 100 A; 75V; LL; 6.8 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N04S2L-03 SPP100N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; LL;3.3mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-06 SPB80N06S2L-06 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 6.3 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPB100N06S2L-05 SPP100N06S2L-05 |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; LL; 4,7 mOhm
OptiMOS Power-Transistor
Silver Mica Capacitor; Capacitance:15pF; Capacitance Tolerance: /- 5%; Series:CD6; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:4.4mm; Leaded Process Compatible:No RoHS Compliant: No
|
INFINEON[Infineon Technologies AG]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP42N03S2L-13 SPB42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.6mOhm, 42A, LL
|
Infineon
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| KMB2D0N60SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
|
INFINEON[Infineon Technologies AG]
|
