| PART |
Description |
Maker |
| RN2905 RN2906 RN2904 RN2902 RN2903 RN2901 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2209 RN2207 RN2208 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2104 RN2103 RN2101 RN2102 RN2106 RN2105 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2313 RN2312 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2310 RN2311 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA2065 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
| 2SA1350 2SA1350D |
Silicon PNP Transistor
Silicon PNP Epitaxial
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SPAK
|
HITACHI[Hitachi Semiconductor]
|
| TPC8401 |
80 AMP MINI-ISO AUTOMOTIVE RELAY
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2N2904 JANTX2N2905A JAN2N2904 JAN2N2905 2N2904A 2N |
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
PNP Transistor
PNP SWITCHING SILICON TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
3 Pin 1.5A Fixed 12V Positive Voltage Regulator 3-TO-220 0 to 125 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
MICROSEMI CORP-LAWRENCE
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
