PART |
Description |
Maker |
2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOSFET Power Switching Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
UPA2756GR |
SWITCHING N-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
UPA2719GR |
SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
UPA2701TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SJ553 2SJ553L 2SJ553S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching 40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|