| PART |
Description |
Maker |
| 2SA1349 E000515 |
From old datasheet system
LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCADE
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPL
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL
|
TOSHIBA[Toshiba Semiconductor]
|
| SST2222A UMT2222A MMST2222A PN2222A |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
NPN Medium Power Transistor (Switching)
|
ROHM[Rohm]
|
| 4126L-T60-T 4126 4126-T60-T |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 200 V, NPN, Si, POWER TRANSISTOR, TO-126
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 高频开关晶体管BALLASTERS
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MMBT2222A SMBT2222A SMBT2222A/MMBT2222A |
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
Infineon Technologies A...
Infineon Technologies AG
|
| FS30ASJ-06F FS30ASJ-06F-T13 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| H5N3003P H5N3003 |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
| H5N2512CF |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2517FN-E H5N2517FN |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK3210 2SK3210L 2SK3210STL 2SK3210S |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N3011P-E H5N3011P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
