| PART |
Description |
Maker |
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| UPA1717 UPA1717G UPA1717G-E2 UPA1717G-E1 |
P-channel enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2908-01S 2SK2908-01L |
N-channel MOS-FET
N-channel MOS-FET 9 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
| 2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B |
N-channel MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC[NEC]
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| UPA620TT UPA620TT-E1 UPA620TT-E2 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA678TB |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
P-Channel enhancement MOS FET for load sw
|
NEC Corp.
|
| UPA652TT UPA652TT-E1 UPA652TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
