| PART |
Description |
Maker |
| FDMF6700 |
Driver plus FET Multi-chip Module
|
Fairchild Semiconductor
|
| FDMF8704V |
High Efficiency / High Frequency FET plus Driver Multi-chip Module with Internal Voltage Regulator
|
Fairchild Semiconductor
|
| MMI-10F |
Multi-mod 10 input module
|
Gamewell-FCI by Honeywell
|
| 102100-1 |
.156 Inch Centerline-Cable to Board AMPMODU .031 x .062 Interconnection System (Mod I); MOD I RECP PLTD 15 SEL ( AMP )
|
Tyco Electronics
|
| IRS2133JPBF IRS2133JTRPBF |
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a mod. 44-lead PLCC package
|
International Rectifier
|
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| MAX244C/D MAX236C/D MAX245C/D MAX232AC/D MAX237C/D |
Transceiver
Line Driver
+5V-powered,Multi-Channel RS-232 driver / receiver
+5V-Powered，Multi-Channel RS-232 Drivers/Receivers
|
Maxim Integrated Products, Inc.
收发
|
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
