PART |
Description |
Maker |
AS200-313 |
As200-313:PHEMT GAAS ic 2 W High Linearity 5 6
|
Skyworks
|
HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
AS217-000 AS217-00006 |
PHEMT GaAs IC High-Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
AS188-92 |
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
AS193-000 |
PHEMT GaAs IC High-Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions Inc.
|
FPD750SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
FPD3000SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
FPD6836SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
HMC490LP5 |
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 16 GHz 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
|
美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
|
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|