| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| SKY77458 |
Front-End Module for LTE / EUTRAN Band VIII (Tx 880-915 MHz), (Rx 925-960 MHz)
|
Skyworks Solutions Inc.
|
| VC-3R0A50-1750 VC-3R0A50-0967A VC-3RA50-0967A VC-2 |
AMC JUMPER,1.32MM,100MM BLACK ASSP的移动电
BNC (M) TO UHF (F) ADAPTERS VCO, 1620 MHz - 1650 MHz
ASSP for Mobile Telephone VCO, 1632.5 MHz - 1672.5 MHz
ASSP for Mobile Telephone VCO, 1280 MHz - 1440 MHz
N (F) TO BNC (F) ADAPTER VCO, 1649.7 MHz - 1686.3 MHz
ASSP for Mobile Telephone VCO, 880 MHz - 915 MHz
N (F) TO BNC (M) ADAPTER
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Component Limit...
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| EMRS-6HX1 |
E-Series Surface Mount Mixer 880 . 915 MHz
|
MACOM[Tyco Electronics]
|
| EMRS-6HX1 |
E-Series Surface Mount Mixer 880 - 915 MHz
|
M/A-COM Technology Solutions, Inc.
|
| DP52-0002-TR DP52-00021 |
Low Cost SMT Dual Band Diplexer, 824-960/1850-1990 MHz(AMPS/PCS), 880-960/1700-1900 MHz(GSM/DCS)
|
Tyco Electronics
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| MRF9085 MRF9085LR3 MRF9085LSR3 |
128K 3.3 VOLT SERIAL CONFIGURATION PROM
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
