| PART |
Description |
Maker |
| PZTA14T1 PZTA14T1_D ON2782 |
From old datasheet system
SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
|
MOTOROLA[Motorola, Inc]
ON Semi
MOTOROLA[Motorola Inc]
|
| 2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| BU806 BU807 BU807TU |
NPN Epitaxial Silicon Darlington Transistor
High Voltage & Fast Switching Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| BCV48T/R BCV28T/R |
FUSEHOLDER 4POLE ALARM-IND PCMNT
TRANSISTOR | BJT | DARLINGTON | PNP | 30V V(BR)CEO | 500MA I(C) | SOT-89 晶体管|晶体管|达林顿|进步党| 30V的五（巴西）总裁| 500mA的一（c）|采用SOT - 89
|
SIEMENS AG
|
| 2SB951AR 2SB951AP |
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | SOT-186 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 8A条一（c）|的SOT - 186
|
STMicroelectronics N.V.
|
| MPSA62 MPSA64 MPSA63 ON2343 |
Darlington Transistor 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
From old datasheet system
For Specifications, See MPSA05, MPSA06 Data
Darlington Transistors(PNP Silicon)
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| CHT918 CHT2907A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | SOT-23 晶体管|晶体管|进步党| 60V的五（巴西）总裁| SOT - 23封装
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | SOT-23 晶体管|晶体管|叩| 15V的五（巴西）总裁| SOT - 23封装
|
Unisonic Technologies Co., Ltd.
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| 2SA1326 2SC3341 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
|
Samsung Semiconductor Co., Ltd.
|
| 2SD2242/2SD2242A 2SD2242Q |
2SD2242. 2SD2242A - NPN Transistor Darlington
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | TO-126VAR 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁| 4A条一（c）|26VAR
|
Panasonic, Corp.
|
