| PART |
Description |
Maker |
| M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
PATCHCORD SQ SCKT-ALLIG CLIP RED
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M470T6554CZ0 M470T6554CZ0-CC M470T6554CZ0-CD6 M470 |
DDR2 Unbuffered SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| VL-MM8-1SBN |
1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN
|
List of Unclassifed Manufacturers
|
| M470L3223BT0 |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| HYMD232M646DP8-D43 HYMD232M646DP8-H HYMD232M646DP8 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
|
Hynix Semiconductor
|
| HYMD564M646BL6-D43 HYMD564M646BL6-H HYMD564M646BL6 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP)
|
Hynix Semiconductor
|
| M471B5273DH0 |
204pin Unbuffered SODIMM
|
Samsung
|
| V43644Y04VCTG-75 |
3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
|
| V436516Z04VTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic Corp
|
| V43658Y04VATG-75PC |
3.3 VOLT 8M x 64 HIGH PERFORMANCE 133 MHZ SDRAM UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
