| PART |
Description |
Maker |
| THM2003J |
SiGe HBT MMIC Wideband Linear Amplifier
|
TACHYONICS[Tachyonics CO,. LTD]
|
| AXIS45 |
Wideband VCXO in double-sealed DIL package Direct replacement of Fujitsu M2 (F100)
|
Advanced XTAL Products
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| T0980 T0980-TJQ T0980-TJS |
SiGe Transmit/ Receive Frontend IC
Sige Transmit/receive Front-end ic
|
ATMEL Corporation
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| PLCDA03C-6 PLCDA05C-6 PLCDA15C-6 |
Direct ProTek Replacement:PLCDA05C-6
Direct ProTek Replacement:PLCDA15C-6
Direct ProTek Replacement:PLCDA03C-6 直接太克替代：PLCDA03C - 6
|
Sumida, Corp.
|
| C450DA700-0207 C450DA700-0209 C450DA700-0214 C460D |
Direct Attach LED Technology Rectangular LED RF Performance
Direct Attach DA700 LEDs
|
Cree, Inc
Marktech Corporate
|
| MAX2680 MAX2680EUT-T MAX2680-MAX2682 MAX2681 MAX26 |
Monostable multivibrator with Schmitt-trigger inputs 14-SO 0 to 70
400MHz to 2.5GHz, Low-Noise, SiGe Downconverter Mixers
400MHz to 2.5GHz / Low-Noise / SiGe Downconverter Mixers
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
