| PART |
Description |
Maker |
| THN6501F |
SiGe NPN Transistor
|
AUK corp
|
| THN6201U THN6201 THN6201E THN6201KF THN6201Z THN62 |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN6702F |
SiGe NPN Transistor
|
AUK corp
|
| THN5601B |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| THN5601SF |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| NESG2031M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| BFP620FE6327 |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|
| NESG3032M14-A |
S BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| MCR01MZPJ5R6 MCR01MZPJ823 MCR01MZPJ620 NESG3033M14 |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2101M05-T1 NESG2101M05-T1-A NESG2101M05-A |
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
|
Renesas Electronics Corporation
|
