| PART |
Description |
Maker |
| 1N387907 1N3883R 1N3879R 1N381 1N382 1N3882R |
Fast Recovery Rectifier
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 400; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 50; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 300; trr (nsec): 200; VF (V): 1.4; IR (µA): 15;
|
Microsemi Corporation
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| APT15DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 15; VR (V): 600; trr (nsec): 16; VF (V): 2; Qrr (nC): 250; 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Microsemi, Corp.
|
| JAN1N4153UR-1 JAN1N3070 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 2; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.81; IR (µA): 0.05; 0.15 A, SILICON, SIGNAL DIODE, DO-213AA
Signal or Computer Diode; Package: DO-7; IO (A): 0.1; IFSM (A): 2; Cj (pF): 5; Vrwm (V): 175; trr (nsec): 50; VF (V): 1; IR (µA): 0.1; 0.1 A, SILICON, SIGNAL DIODE, DO-7
|
Microsemi, Corp.
|
| SDR1ASMS SDR1MSMS RU0003H RU0003H-15 |
1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
Solid States Devices, Inc
Solid States Devices, I...
|
| SDR936Z SDR939M |
30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-254AA
30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| SDR1-12 SDR1-12S SDR1-12SMS SDR1-12SMSS SDR1-12SMS |
1 A, 1200 V, SILICON, SIGNAL DIODE
1.0 AMP 1200 - 1600 VOLTS 70 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
|
| 1N5809CBUS 1N5807CBUS 1N5811CBUS |
Ultra Fast Rectifier (trr less than 100ns)
|
Microsemi
|
| UPR5E3 UPR5E3/TR13 UPR5E3/TR7 |
Ultra Fast Rectifier (trr less than 100ns)
|
Microsemi
|
| APT15DQ60B APT15DQ60BG |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 15; VR (V): 600; trr (nsec): 16; VF (V): 2; Qrr (nC): 250; 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| SDR905 SDR900 SDR901 SDR902 SDR903 SDR904 |
30 AMP 50-500 VOLTS 50 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
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