| PART |
Description |
Maker |
| CY7C1520V18 CY7C1516V18 CY7C1518V18 CY7C1522V18 CY |
RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata RAM9 QDR-I/DDR-I/QDR-II/DDR-二勘误表
|
Cypress Semiconductor Corp.
|
| CY7C151 |
(CY7C129 - CY7C152) RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
|
Cypress Semiconductor
|
| CY7C1304DV25 CY7C1303BV18 CY7C1303BV25 CY7C151V18 |
RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
|
Cypress Semiconductor
|
| LTC3413EFE LTC3413 |
3A, 2MHz Monolithic Synchronous Regulator for DDR/QDR Memory Termination
|
LINER[Linear Technology]
|
| LTC3717 |
Wide Operating Range / No RSENSE Step-Down Controller for DDR/QDR Memory Termination
|
Linear
|
| LTC3717 LTC3717EGN |
Wide Operating Range, No RSENSE Step-Down Controller for DDR/QDR Memory Termination
|
Linear Technology
|
| CY7C1163V18-400BZC |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| CY7C1412BV18-250BZC |
2MX18 QDR-II BURST 2 SRAM 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
