| PART |
Description |
Maker |
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| FTD8007 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH6613 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5826 |
Nch SBD
|
SANYO
|
| ES6U2 |
1.5V Drive Nch SBD MOSFET
|
Rohm
|
| US5U3 US5U31 |
2.5V Drive Nch SBD MOSFET
|
Rohm
|
| QS5U1606 |
2.5V Drive Nch SBD MOS FET
|
Rohm
|
| US5U1 |
2.5V Drive Nch SBD MOS FET
|
ROHM[Rohm]
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| CPH5605 CPH5606 |
Pch Nch
N-Channel and P-Channel Silicon MOSFETs Ultrahigh-Speed Switching Applications
|
Sanyo Semicon Device
|
| CPH5856 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
